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      2004 Jan 26 2 NXP Semiconductors Product data sheet Low-leakage diode BAS416 FEATURES ? Plastic SMD package ? Low leakage current: typ. 3 pA ? Switching time: typ. 0.8 μs ? Continuous reverse voltage: max. 75 V ? Repetitive peak reverse voltage: max. 85 V ? Repetitive peak forward current: max. 500 mA. APPLICATIONS ? Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) (SC-76) and symbol. Marking code: D4. The marking bar indicates the cathode. handbook, halfpage12 MAM406 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS416 ? plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage ? 85 V VR continuous reverse voltage ? 75 V IF continuous forward current see Fig.2 ? 200 mA IFRM repetitive peak forward current ? 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 μs ? 4 A t = 1 ms ? 1 A t = 1 s ? 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 ? 250 mW Tstg storage temperature ?65 +150 °C Tj junction temperature ? 150 °C |